Datasheet4U Logo Datasheet4U.com

STF24N60DM2 - N-CHANNEL POWER MOSFET

General Description

This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.

Key Features

  • Order code STF24N60DM2 VDS @ TJmax 650 V RDS(on) max 0.20 Ω.
  • Fast-recovery body diode.
  • Extremely low gate charge and input capacitance.
  • Low on-resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 18 A.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STF24NM60N N-Channel MOSFET INCHANGE
STF24NM65N N-Channel MOSFET INCHANGE
STF2454 Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STF2454A Dual N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STF2455 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STF24N60M2 N-channel Power MOSFET
STF24N60M6 N-CHANNEL POWER MOSFET
STF24N65M2 N-channel MOSFET
STF24NF12 N-channel MOSFET
STF24NM60N N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STF24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet − production data 3 2 1 TO-220FP Figure 1. Internal schematic diagram D(2) Features Order code STF24N60DM2 VDS @ TJmax 650 V RDS(on) max 0.20 Ω • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 18 A Applications • Switching applications G(1) S(3) AM01476v1 Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series.