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STF25N60M2-EP - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology.

Key Features

  • Order code STF25N60M2-EP VDS @ TJmax 650 V RDS(on) max. 0.188 Ω ID 18 A.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • Very low turn-off switching losses.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF25N60M2-EP N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP Power MOSFET in a TO-220FP package Datasheet - production data 3 12 TO-220FP Figure 1: Internal schematic diagram Features Order code STF25N60M2-EP VDS @ TJmax 650 V RDS(on) max. 0.188 Ω ID 18 A • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100% avalanche tested • Zener-protected Applications • Switching applications • Tailored for Very High Frequency Converters (f > 150 kHz) Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 EP enhanced performance technology.