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STF25N80K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order code VDS @ TJmax RDS(on) max ID PTOT STB25N80K5 250 W STF25N80K5 STP25N80K5 STW25N80K5 800 V < 0.260 Ω 19.5 A 40 W 250 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM.
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB25N80K5, STF25N80K5, STP25N80K5, STW25N80K5 N-channel 800 V, 0.19 Ω typ., 19.5 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet − production data TAB 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram ' 7$% Features Order code VDS @ TJmax RDS(on) max ID PTOT STB25N80K5 250 W STF25N80K5 STP25N80K5 STW25N80K5 800 V < 0.260 Ω 19.