STFI9N80K5 Overview
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power S(3) AM15572v1_no_tab density and high efficiency. Contents Contents STF9N80K5, STFI9N80K5 1 Electrical ratings...
STFI9N80K5 Key Features
- Industry’s lowest RDS(on) x area
- Industry’s best figure of merit (FoM)
- Ultra-low gate charge
- 100% avalanche tested
- Zener-protected