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STGB20V60DF - 600V 20A very high speed trench gate field-stop IGBT

Product Overview

STMicroelectronics

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STGB20V60DF 600V 20A very high speed trench gate field-stop IGBT by STMicroelectronics - Datasheet Preview — Datasheet preview – STGB20V60DF

Datasheet Details

Part number	STGB20V60DF
Manufacturer	STMicroelectronics
File Size	2.07 MB
Description	600V 20A very high speed trench gate field-stop IGBT
Datasheet	STGB20V60DF Datasheet
Additional preview pages of the STGB20V60DF datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
Very high speed switching series 3 2 1 1 3.
Tail-less switching off.
Low saturation voltage: VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance 3 TO-220 TAB D²PAK 3 2 1 1 2.
Very fast soft recovery antiparallel diode.
Lead free package TO-247 TO-3P Figure 1. Internal schematic diagram.

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Published: May 5, 2014 |