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STGW19NC60WD - N-channel IGBT

General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances.

The suffix “W” identifies a family optimized for very high frequency application.

High freq

Key Features

  • Type VCES VCE(sat) (max)@25°C IC @100°C STGP19NC60WD 600V STGW19NC60WD 600V < 2.5V < 2.5V 22A 23A.
  • High frequency operation.
  • Low CRES / CIES ratio (no cross-conduction susceptibility).
  • Very soft ultra fast recovery antiparallel diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH™ IGBT Features Type VCES VCE(sat) (max)@25°C IC @100°C STGP19NC60WD 600V STGW19NC60WD 600V < 2.5V < 2.5V 22A 23A ■ High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptibility) ■ Very soft ultra fast recovery antiparallel diode Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “W” identifies a family optimized for very high frequency application.