Datasheet Summary
Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO247-4 package
TO247-4
2 34 1
C(1,TAB)
G(4) K(3)
Features
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.55 V (typ.) @ IC = 100 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Positive VCE(sat) temperature coefficient
- Excellent switching performance thanks to the extra driving kelvin pin
Applications
- Welding
- Power factor correction
- UPS
- Solar inverters
- Chargers
E(2)
NG4K3E2C1TAB_no_diode
Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The...