Datasheet Details
| Part number | STGW100H65FB2-4 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 249.19 KB |
| Description | IGBT |
| Datasheet |
 STGW100H65FB2-4 Datasheet
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General Description
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.
The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.
Key Features
- Maximum junction temperature: TJ = 175 °C.
- Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A.
- Minimized tail current.
- Tight parameter distribution.
- Low thermal resistance.
- Positive VCE(sat) temperature coefficient.
- Excellent switching performance thanks to the extra driving kelvin pin.