STGW100H65FB2-4 - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW100H65FB2-4
Manufacturer	STMicroelectronics
File Size	249.19 KB
Description	IGBT
Datasheet	STGW100H65FB2-4 Datasheet
Additional preview pages of the STGW100H65FB2-4 datasheet.

Product details

Description

The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure.

The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.

Features

Maximum junction temperature: TJ = 175 °C.
Low VCE(sat) = 1.55 V (typ. ) @ IC = 100 A.
Minimized tail current.
Tight parameter distribution.
Low thermal resistance.
Positive VCE(sat) temperature coefficient.
Excellent switching performance thanks to the extra driving kelvin pin.

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Published: Jun 26, 2023 |