Datasheet Summary
STGW15M120DF3 STGWA15M120DF3
Trench gate field-stop IGBT, M series 1200 V, 15 A low loss
- production data
72 72ORQJOHDGV
Figure 1.Internal schematic diagram &RU7$%
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Features
- 10 µs of short-circuit withstand time
- VCE(sat) = 1.85 V (typ.) @ IC = 15 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery antiparallel diode
Applications
- Industrial drives
- UPS
- Solar
- Welding
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum promise in performance to maximize the...