STGW15M120DF3 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling...
STGW15M120DF3 Key Features
- 10 µs of short-circuit withstand time
- VCE(sat) = 1.85 V (typ.) @ IC = 15 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery antiparallel diode