STMicroelectronics STGW10M65DF2
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.| Part No. | STGW10M65DF2 |
|---|---|
| Datasheet | STGW10M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 10A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● 6 µs of short-circuit withstand time● VCE(sat) = 1.55 V (typ.) @ IC = 10 A
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
DESCRIPTION
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW10M65DF2 Table 1: Device summary Marking G10M65DF2 Package TO-247 Packing Tube March 2016 DocID029083 Rev 1 Th
