STGW10M65DF2 - IGBT

Product Overview

STMicroelectronics

Datasheet Details

Part number	STGW10M65DF2
Manufacturer	STMicroelectronics
File Size	776.41 KB
Description	IGBT
Datasheet	STGW10M65DF2 Datasheet
Additional preview pages of the STGW10M65DF2 datasheet.

Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 10 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Jan 7, 2017 |