Datasheet Summary
Trench gate field-stop IGBT, M series 650 V, 10 A low loss
- production data
3 2 1
TO-247
Figure 1: Internal schematic diagram
Features
- 6 µs of short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 10 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
Applications
- Motor control
- UPS
- PFC
Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit...