Datasheet Details
| Part number | STGW10M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 776.41 KB |
| Description | IGBT |
| Datasheet | STGW10M65DF2-STMicroelectronics.pdf |
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Overview: STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic.
| Part number | STGW10M65DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 776.41 KB |
| Description | IGBT |
| Datasheet | STGW10M65DF2-STMicroelectronics.pdf |
|
|
|
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.
Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
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