Datasheet Details
| Part number | STGW15H120DF2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 594.24 KB |
| Description | IGBT |
| Datasheet |
 STGW15H120DF2 Datasheet
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General Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.
Key Features
- Maximum junction temperature: TJ = 175 °C.
- High speed switching series.
- Minimized tail current.
- VCE(sat) = 2.1 V @ IC = 15 A.
- 5 μs minimum short circuit withstand time at TJ = 150 °C.
- Safe paralleling.
- Low thermal resistance.
- Very fast recovery antiparallel diode.