STGW30M65DF2 Key Features
- 6 µs of minimum short-circuit withstand time
- VCE(sat) = 1.55 V (typ.) @ IC = 50 A
- Tight parameters distribution
- Safer paralleling
- Low thermal resistance
- Soft and very fast recovery antiparallel diode
- Part: STGW30M65DF2
- Manufacturer: STMicroelectronics (official site)
- Size: 562.55 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| STGW30H60DF | 30A high speed trench gate field-stop IGBT |
| STGW30H60DFB | 30A high speed HB series IGBT |
| STGW30H65FB | IGBT |
| STGW30N120KD | short circuit rugged IGBT |
| STGW30NC60W | ultra fast IGBT |
STGW30M65DF2 Description
plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum promise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer...