STMicroelectronics STGW30M65DF2
The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the lowloss and the short-circuit functionality are essential.| Part No. | STGW30M65DF2 |
|---|---|
| Datasheet | STGW30M65DF2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 30A low-loss IGBT |
| Buy | Stock & Price |
FEATURES
● 6 μs of minimum short-circuit withstand time● Low VCE(sat) = 1.55 V (typ.) @ IC = 30 A
● Tight parameter distribution
● Safer paralleling
● Low thermal resistance
● Soft and very fast-recovery antiparallel diode
APPLICATIONS
● Motor control● UPS
● PFC
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status links STGW30M65DF2 STGWA30M65DF2 Product summary Order code STGW30M65DF2 Marking G30M65DF2 Package TO-247 Packing Tube Order code STGWA30M65DF2 Marking G30M65DF2 Package TO-247 long leads Packing Tube DS11002 - Rev 6 - November 2024 For further information contact your local STMicroelectronics sales office. STGW30M65DF2, STGWA30M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Conti...
