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STGW30M65DF2 - Trench gate field-stop IGBT

General Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

Key Features

  • 6 µs of minimum short-circuit withstand time.
  • VCE(sat) = 1.55 V (typ. ) @ IC = 50 A.
  • Tight parameters distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STGW30M65DF2, STGWA30M65DF2 Trench gate field-stop IGBT, M series 650 V, 30 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of minimum short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 50 A  Tight parameters distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description plur These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential.