STGW30V60DF Key Features
- Maximum junction temperature: TJ = 175 °C
- Tail-less switching off
- VCE(sat) = 1.85 V (typ.) @ IC = 30 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Very fast soft recovery antiparallel diode
- Part: STGW30V60DF
- Manufacturer: STMicroelectronics (official site)
- Size: 1.09 MB
Related STMicroelectronics (official site) Datasheets
| Part Number | Description |
|---|---|
| STGW30H60DF | 30A high speed trench gate field-stop IGBT |
| STGW30H60DFB | 30A high speed HB series IGBT |
| STGW30H65FB | IGBT |
| STGW30M65DF2 | Trench gate field-stop IGBT |
| STGW30N120KD | short circuit rugged IGBT |
STGW30V60DF Description
This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum promise E (3) between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.