STMicroelectronics STGW30V60DF
The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.FEATURES
● Maximum junction temperature: TJ = 175 °C● Tail-less switching off
● VCE(sat) = 1.85 V (typ.) @ IC = 30 A
● Tight parameter distribution
● Safe paralleling
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Photovoltaic inverters● Uninterruptible power supply
● Welding
● Power factor correction
● Very high frequency converters
DESCRIPTION
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGB30V60DF STGW30V60DF Product summary Order code STGB30V60DF Marking GB30V60DF Package D²PAK Packing Tape and reel Order code STGW30V60DF Marking GW30V60DF Package TO-247 Packing Tube DS9531 - Rev 5 - June 2025 For further information, contact your local STMicroelectronics sales office. STGB30V60DF, STGW30V60DF Electrical ratings 1 Electrical ratings Table 1.