STGW40S120DF3 Datasheet | STMicroelectronics

STGW40S120DF3, STGWA40S120DF3 Trench gate field-stop IGBT, S series 1200 V, 40 A low drop - production data 72 72ORQJOHDGV Figure 1. Internal schematic diagram &RU7$% Features - 10 µs of short-circuit withstand time - VCE(sat) = 1.65 V (typ.) @ IC = 40 A - Tight parameter distribution - Safer paralleling - Low thermal resistance - Soft and fast recovery antiparallel diode Applications - Industrial drives - UPS - Solar - Welding - ( Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW40S120DF3 STGWA40S120DF3 Table 1. Device summary Marking Package G40S120DF3 TO-247 G40S120DF3 TO-247 long leads Packing Tube...