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STGWA40H120DF2 - 1200V 40A high speed IGBT

Download the STGWA40H120DF2 datasheet PDF. This datasheet also covers the STGW40H120DF2 variant, as both devices belong to the same 1200v 40a high speed igbt family and are provided as variant models within a single manufacturer datasheet.

Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the H series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 2.1 V (typ. ) @ IC = 40 A.
  • 5 μs minimum short circuit withstand time at TJ = 150 °C.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast recovery antiparallel diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW40H120DF2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGW40H120DF2, STGWA40H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 40 A high speed 3 2 1 TO-247 3 12 TO-247 long leads Product status links STGW40H120DF2 STGWA40H120DF2 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE(sat) = 2.1 V (typ.) @ IC = 40 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • Safe paralleling • Low thermal resistance • Very fast recovery antiparallel diode Applications • Photovoltaic inverters • Uninterruptible power supply • Welding • Power factor correction • High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
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