STMicroelectronics STGWA40HP65FB2
The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy.| Part No. | STGWA40HP65FB2 |
|---|---|
| Datasheet | STGWA40HP65FB2 Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 40A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature : TJ = 175 °C● Low VCE(sat) = 1.55 V(typ.) @ IC = 40 A
● Co-packaged protection diode
● Minimized tail current
● Tight parameter distribution
● Low thermal resistance
● Positive VCE(sat) temperature coefficient
APPLICATIONS
● Welding● Power factor correction
DESCRIPTION
A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA40HP65FB2 Product summary Order code STGWA40HP65FB2 Marking G40HP65FB2 Package TO-247 long leads Packing Tube DS12538 - Rev 6 - February 2026 For further information, contact your local STMicroelectronics sales office. STGWA40HP65FB2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) P...
