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STGWA40H60DLFB - IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Low VF soft recovery co-packaged diode Figure 1: Internal schematic diagram C (2).

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Full PDF Text Transcription

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STGWA40H60DLFB Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package Datasheet - production data Features  Maximum junction temperature: TJ = 175 °C  High speed switching series  Minimized tail current  Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A  Tight parameter distribution  Safe paralleling  Low thermal resistance  Low VF soft recovery co-packaged diode Figure 1: Internal schematic diagram C (2) Applications  Induction heating  Microwave oven  Resonant converters G (1) Sc12850_no_tab E (3) Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
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