Datasheet Summary
Trench gate field-stop 650 V, 40 A high speed HB series IGBT
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safe paralleling
- Positive VCE(sat) temperature coefficient
- Low thermal resistance
- Very fast soft recovery antiparallel diode
Applications
- Photovoltaic inverters
- High frequency converters
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between...