STGWA40IH65DF Overview
The newest IGBT 650 V soft-switching IH series has been developed using an advanced proprietary trench gate field-stop structure, whose performance is optimized both in conduction and switching losses for soft mutation. A freewheeling diode with a low drop forward voltage is included. The result is a product specifically designed to maximize efficiency for any resonant and softswitching app.
STGWA40IH65DF Key Features
- Designed for soft mutation only
- Maximum junction temperature: TJ = 175 °C
- VCE(sat) = 1.5 V (typ.) @ IC = 40 A
- Minimized tail current
- Tight parameter distribution
- Low thermal resistance
- Low drop voltage freewheeling co-packaged diode
- Positive VCE(sat) temperature coefficient