STGWA40S120DF3 Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STGWA40S120DF3 Key Features
- 10 µs of short-circuit withstand time
- VCE(sat) = 1.65 V (typ.) @ IC = 40 A
- Tight parameter distribution
- Safer paralleling
- Low thermal resistance
- Soft and fast recovery antiparallel diode