STGWA75H65DFB2 Datasheet | STMicroelectronics

Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO‑247 long leads package Features C(2, TAB) - Maximum junction temperature: TJ = 175 °C - Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A - Very fast and soft recovery co-packaged diode - Minimized tail current - Tight parameter distribution - Low thermal resistance - Positive VCE(sat) temperature coefficient Applications G(1) E(3) - Welding - Power factor correction - UPS - Solar inverters - Chargers NG1E3C2T Description The newest IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behavior at low current values, as well as in terms of reduced switching energy. A very fast soft recovery diode is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications. Product status link STGWA75H65DFB2 Product summary Order code Marking G75H65DFB2 Package TO-247 long leads Packing Tube DS13215...