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STGWA75M65DF2 - IGBT

This page provides the datasheet information for the STGWA75M65DF2, a member of the STGW75M65DF2 IGBT family.

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.

Features

  • 6 µs of short-circuit withstand time.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 75 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast recovery antiparallel diode.

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STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.65 V (typ.) @ IC = 75 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.
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