STMicroelectronics STGWA80H65FB
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new “HB” series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.| Part No. | STGWA80H65FB |
|---|---|
| Datasheet | STGWA80H65FB Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 80A high speed IGBT |
| Buy | Stock & Price |
FEATURES
TAB 3 2 1 TO-247 TO-247 long leads 3 2 1 TO-3P● Maximum junction temperature: TJ = 175 °C
● High speed switching series
● Minimized tail current
● VCE(sat) = 1.6 V (typ.) @ IC = 80 A
● Tight parameter distribution
● Safe paralleling
● Low thermal resistance
APPLICATIONS
Figure 1. Internal schematic diagram C (2 or TAB)● Photovoltaic inverters
● High frequency converters
DESCRIPTION
G (1) E (3) Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGW80H65FB STGWA80H65FB STGWT80H65FB Table 1. Device summary Marking Package GW80H65FB TO-247 GWA80H65FB GWT80H65FB TO-247 long leads TO-3P Packaging Tube Tube Tube June 2014 This is information on a product in full production. DocID026401 Rev 1 1/18 18 Contents Contents STGW80H65FB, STGWA80H65FB, STGWT80H65FB 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
