STMicroelectronics STGWA80H65DFB
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.| Part No. | STGWA80H65DFB |
|---|---|
| Datasheet | STGWA80H65DFB Download |
| Manufacturer |  STMicroelectronics |
| Description | 650V 80A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● Maximum junction temperature: TJ = 175 °C● High speed switching series
● Minimized tail current
● Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 80 A
● Tight parameter distribution
● Safe paralleling
● Positive VCE(sat) temperature coefficient
● Low thermal resistance
● Very fast soft recovery antiparallel diode
APPLICATIONS
● Solar inverters (string and central)● AC-DC converters
DESCRIPTION
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product summary Order code STGWA80H65DFB Marking GWA80H65DFB Package TO-247 long leads Packing Tube DS11933 - Rev 3 - March 2025 For further information, contact your local STMicroelectronics sales office. STGWA80H65DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 1...
