• Part: STGWA80H65DFBAG
  • Description: IGBT
  • Manufacturer: STMicroelectronics
  • Size: 275.87 KB
Download STGWA80H65DFBAG Datasheet PDF
STMicroelectronics
STGWA80H65DFBAG
STGWA80H65DFBAG is IGBT manufactured by STMicroelectronics.
Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long leads Features TO-247 long leads C(2, TAB) - AEC-Q101 qualified - High-speed switching series - Maximum junction temperature: TJ = 175 °C - Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A - Minimized tail current - Tight parameter distribution - Positive temperature VCE(sat) coefficient - Soft and very fast recovery antiparallel diode Applications G(1) - PFC - High frequency converters E(3) G1C2TE3_diode Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which...