STGWA80H65DFBAG Overview
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum promise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
STGWA80H65DFBAG Key Features
- AEC-Q101 qualified
- High-speed switching series
- Maximum junction temperature: TJ = 175 °C
- Low VCE(sat) = 1.65 V (typ.) @ IC = 80 A
- Minimized tail current
- Tight parameter distribution
- Positive temperature VCE(sat) coefficient
- Soft and very fast recovery antiparallel diode