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STGWA80H65DFBAG Datasheet IGBT

Manufacturer: STMicroelectronics

Overview: STGWA80H65DFBAG Datasheet Automotive-grade trench gate field-stop 650 V, 80 A high speed HB series IGBT in a TO-247 long.

General Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Key Features

  • TO-247 long leads C(2, TAB).
  • AEC-Q101 qualified.
  • High-speed switching series.
  • Maximum junction temperature: TJ = 175 °C.
  • Low VCE(sat) = 1.65 V (typ. ) @ IC = 80 A.
  • Minimized tail current.
  • Tight parameter distribution.
  • Positive temperature VCE(sat) coefficient.
  • Soft and very fast recovery antiparallel diode.

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