STMicroelectronics STGWA80H65FBAG
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.| Part No. | STGWA80H65FBAG |
|---|---|
| Datasheet | STGWA80H65FBAG Download |
| Manufacturer |  STMicroelectronics |
| Description | Automotive-grade 650V 80A high speed IGBT |
| Buy | Stock & Price |
FEATURES
● AEC-Q101 qualified● Maximum junction temperature: TJ = 175 °C
● High-speed switching series
● Minimized tail current
● VCE(sat) = 1.65 V (typ.) @ IC = 80 A
● Tight parameters distribution
● Safer paralleling
● Low thermal resistance
APPLICATIONS
● PFC● High frequency converters
DESCRIPTION
Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGWA80H65FBAG Product summary Order code STGWA80H65FBAG Marking G80H65FBAG Package TO-247 long leads Packing Tube DS14238 - Rev 1 - February 2023 For further information contact your local STMicroelectronics sales office. STGWA80H65FBAG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(2) Pulsed collector current (tp = 1 ms) Gate-emitter voltage VGE...
