Datasheet Summary
STGW60H60DLFB STGWT60H60DLFB
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
- production data
3 2 1
TO-247
TO-3P
3 2 1
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VF soft recovery co-packaged diode
- Lead free package
Figure 1. Internal schematic diagram
C (2 or TAB)
Applications
- Induction heating
- Microwave oven
- Resonant converters
G (1) E (3)
Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device...