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STGWT60H60DLFB Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGWT60H60DLFB datasheet PDF. This datasheet also includes the STGW60H60DLFB variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGW60H60DLFB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution

Overview

STGW60H60DLFB STGWT60H60DLFB Trench gate field-stop IGBT, HB series 600 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Low VF soft recovery co-packaged diode.
  • Lead free package Figure 1. Internal schematic diagram C (2 or TAB).

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