STGWT60H60DLFB Description
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum promise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGWT60H60DLFB Key Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Low VF soft recovery co-packaged diode
- Lead free package