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STGWT60H65F Datasheet 650 V field stop trench gate IGBT

Manufacturer: STMicroelectronics

Download the STGWT60H65F datasheet PDF. This datasheet also includes the STGW60H65F variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGW60H65F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.

Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight parameter distribution result in an easier paralleling operation.

Table 1.

Overview

STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production.

Key Features

  • High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2.