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STGWT60H65F - 650 V field stop trench gate IGBT

Download the STGWT60H65F datasheet PDF (STGW60H65F included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 650 v field stop trench gate igbt.

Description

Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.

Features

  • High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2.

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Note: The manufacturer provides a single datasheet file (STGW60H65F-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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STGW60H65F STGWT60H65F 60 A, 650 V field stop trench gate IGBT Datasheet − production data Features ■ ■ ■ ■ ■ ■ High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2 Applications ■ ■ ■ ■ ■ TO-3P Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High switching frequency converters Figure 1. Internal schematic diagram Description Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters.
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