Datasheet4U Logo Datasheet4U.com

STGWT60H65FB Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGWT60H65FB datasheet PDF. This datasheet also includes the STGW60H65FB variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STGW60H65FB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure.

The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 Figure 1.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

More Datasheets from STMicroelectronics

Part Number Description
STGWT60H65F 650 V field stop trench gate IGBT
STGWT60H65DFB Trench gate field-stop IGBT
STGWT60H60DLFB Trench gate field-stop IGBT
STGWT60V60DF Trench gate field-stop IGBT
STGWT15H60F Trench gate field-stop IGBT
STGWT20H60DF 600V 20A high speed trench gate field-stop IGBT
STGWT20H65FB IGBT
STGWT20V60DF 600V 20A very high speed trench gate field-stop IGBT
STGWT20V60F IGBT
STGWT30H60DFB 30A high speed HB series IGBT