Datasheet Summary
STGW60H65FB STGWT60H65FB
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
- production data
3 2 1
TO-247
TO-3P
3 2 1
Figure 1. Internal schematic diagram
C (2, TAB)
G (1)
E (3)
Features
- Maximum junction temperature: TJ = 175 °C
- High speed switching series
- Minimized tail current
- VCE(sat) = 1.6 V (typ.) @ IC = 60 A
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
Applications
- Photovoltaic inverters
- High frequency converters
Description
These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum...