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STGWT60H65DFB Datasheet Trench gate field-stop IGBT

Manufacturer: STMicroelectronics

Download the STGWT60H65DFB datasheet PDF. This datasheet also includes the STGW60H65DFB variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (STGW60H65DFB-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

General Description

These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Overview

STGW60H65DFB, STGWA60H65DFB, STGWT60H65DFB Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT 3 2 1 TO-247 TAB 3 2 1 TO-247 long leads 3 2.

Key Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
  • Tight parameter distribution.
  • Safe paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.

More Datasheets from STMicroelectronics

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