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STH160N4LF6-2 - N-channel Power MOSFET

Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Logic level drive.
  • High avalanche ruggedness.
  • 100% avalanche tested Figure 1. Internal schematic diagram.

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STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data TAB 2 3 1 H2PAK-2 Features Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on) • Logic level drive • High avalanche ruggedness • 100% avalanche tested Figure 1. Internal schematic diagram Applications • Switching applications 'Ć 7$% Description *Ć  This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6Ć Ć $0Y Order code STH160N4LF6-2 Table 1.
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