STH160N4LF6-2 Description
Ć This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6Ć Ć $0Y Order code STH160N4LF6-2 Table.
STH160N4LF6-2 Key Features
- RDS(on)
- Qg industry benchmark
- Extremely low on-resistance RDS(on)
- Logic level drive
- High avalanche ruggedness
- 100% avalanche tested