STH160N4LF6-2 Datasheet | STMicroelectronics

N-channel 40 V, 0.0018 mΩ typ., 120 A, STrip FET™ VI Deep GATE™ Power MOSFET in a H²PAK-2 package - production data 2 3 H2PAK-2 Features Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - Logic level drive - High avalanche ruggedness - 100% avalanche tested Figure 1. Internal schematic diagram Applications - Switching applications 'Ć7$% Description - Ć This device is an N-channel Power MOSFET th developed using the 6 generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6ĆĆ $0Y Order code STH160N4LF6-2 Table 1. Device summary Marking Package 160N4LF6 H PAK-2 Packaging Tape and reel April 2014 This is information on a product in full...