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STH160N4LF6-2 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data TAB 2.

General Description

*Ć  This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

6Ć Ć $0Y Order code STH160N4LF6-2 Table 1.

Key Features

  • Order code VDS RDS(on) max ID PTOT STH160N4LF6-2 40 V 0.0022 Ω 120 A 150 W.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Logic level drive.
  • High avalanche ruggedness.
  • 100% avalanche tested Figure 1. Internal schematic diagram.

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