STH180N10F3-2
STH180N10F3-2 is N-Channel Power MOSFET manufactured by STMicroelectronics.
TAB 23 1
H2PAK-2
D(TAB)
G(1)
N‑channel 100 V, 3.9 mΩ typ., 180 A STrip FET F3 Power MOSFET in H²PAK‑2 package
Features
Order code
100 V
- Ultra low on-resistence
- 100% avalanche tested
RDS(on) max. 4.5 mΩ
ID 180 A
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using STrip FET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
S(2,3)
NCHG1DTABS23
Product status link STH180N10F3-2
Product summary
Order code
Marking
180N10F3
Package
H2PAK-2
Packing
Tape and reel
DS7317
- Rev 3
- March 2022 For further information contact your local STMicroelectronics sales...
