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STH185N10F3-2 - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Features

  • Order code STH185N10F3-2 VDS 100 V RDS(on) max. 4.5 mΩ ID 180 A Figure 1: Internal schematic diagram D(TAB) G(1).
  • AEC-Q101 qualified.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Full PDF Text Transcription

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STH185N10F3-2 Automotive-grade N-channel 100 V, 180 A, 3.9 mΩ typ., STripFET™ F3 Power MOSFET in an H²PAK-2 package Datasheet - production data Features Order code STH185N10F3-2 VDS 100 V RDS(on) max. 4.5 mΩ ID 180 A Figure 1: Internal schematic diagram D(TAB) G(1)  AEC-Q101 qualified  Ultra low on-resistance  100% avalanche tested Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. S(2, 3) Order code STH185N10F3-2 AM01475v5 Table 1: Device summary Marking Packages 185N10F3 H2PAK-2 Packing Tape and reel October 2016 DocID026910 Rev 3 This is information on a product in full production.
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