Datasheet Details
| Part number | STH310N10F7-2 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 524.74 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet |
 STH310N10F7-2 Datasheet
|
|
|
General Description
These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.
The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
Table 1.
Key Features
- TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A.
- Ultra low on-resistance.
- 100% avalanche tested.