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STH310N10F7-2 - N-CHANNEL Power MOSFET

Datasheet Summary

Description

These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Datasheet preview – STH310N10F7-2

Datasheet Details

Part number STH310N10F7-2
Manufacturer STMicroelectronics
File Size 524.74 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STH310N10F7-2 Datasheet
Additional preview pages of the STH310N10F7-2 datasheet.

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Full PDF Text Transcription

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STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™ 22 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.
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