STH310N10F7-6 Description
th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order codes STH310N10F7-2 STH310N10F7-6 Table.
STH310N10F7-6 Key Features
- Ultra low on-resistance
- 100% avalanche tested