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STH310N10F7-6 - N-CHANNEL Power MOSFET

Download the STH310N10F7-6 datasheet PDF. This datasheet also covers the STH310N10F7-2 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Key Features

  • TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A.
  • Ultra low on-resistance.
  • 100% avalanche tested.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STH310N10F7-2-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STH310N10F7-2, STH310N10F7-6 N-channel 100 V, 1.9 mΩ typ., 180 A STripFET™ VII DeepGATE™ 22 Power MOSFET in H PAK-2 and H PAK-6 packages Datasheet - production data Features TAB 2 3 1 H2PAK-2 TAB 1 H2PAK-6 7 Figure 1. Internal schematic diagram Order codes VDS RDS(on) max. ID STH310N10F7-2 100 V STH310N10F7-6 2.3 mΩ 180 A • Ultra low on-resistance • 100% avalanche tested Applications • Switching applications Description th These devices utilize the 7 generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order codes STH310N10F7-2 STH310N10F7-6 Table 1.