STH360N4F6-2 Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 2 3 1 H2PAK-2 Figure.
STH360N4F6-2 Key Features
- preliminary data
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness