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STH360N4F6-2 - N-channel Power MOSFET

Datasheet Summary

Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Features

  • N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet.
  • preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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Datasheet Details

Part number STH360N4F6-2
Manufacturer STMicroelectronics
File Size 232.91 KB
Description N-channel Power MOSFET
Datasheet download datasheet STH360N4F6-2 Datasheet
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Full PDF Text Transcription

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STH360N4F6-2 Features N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package Datasheet − preliminary data Order code STH360N4F6-2 VDSS 40 V RDS(on) max ID < 1.25 mΩ 180 A(1) 1. Current limited by package ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. TAB 2 3 1 H2PAK-2 Figure 1. Internal schematic diagram $4!" ' Table 1.
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