STH360N4F6-2
STH360N4F6-2 is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
N-channel 40 V, 180 A STripFET™ VI DeepGATE™ Power MOSFET in H²PAK-2 package
- preliminary data
Order code STH360N4F6-2
VDSS 40 V
RDS(on) max
< 1.25 mΩ 180 A(1)
1. Current limited by package
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
TAB 2 3 1
H2PAK-2
Figure 1. Internal schematic diagram
$4!"
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Table 1. Device summary Order code
Marking...
