Datasheet Details
| Part number | STH36N60DM6-7AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 465.43 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STH36N60DM6-7AG Datasheet
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| Part number | STH36N60DM6-7AG |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 465.43 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
STH36N60DM6-7AG Datasheet
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This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.
Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Prerelease product(s) DS11713 - Rev 3 - September 2018 For further information contact your local STMicroelectronics sales office.
STH36N60DM6-7AG Datasheet Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh™ DM6 Power MOSFET in an H²PAK-7 package TAB Order code VDS RDS(on) max.
ID STH36N60DM6-7AG 600 V 0.099 Ω 29 A 7 1 H2PAK-7 Drain(TAB) Gate(1) Driver source (2) Power source (3, 4, 5, 6, 7) N-chG1DS2PS34567DTABZ Product status link STH36N60DM6-7AG Product summary Order code STH36N60DM6-7AG Marking 36N60DM6 Package H²PAK-7 Packing Tape and reel • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) x area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely dv/dt ruggedness • Zener-protected • Tab-leads creepage distance 4.5 mm typ.
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