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STH52N10LF3-2AG - Automotive-grade N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology.

It is designed to minimize on-resistance and gate charge to provide superior switching performance.

Features

  • Order code STH52N10LF3-2AG VDS 100 V RDS(on) max. 20 mΩ ID 52 A.
  • Designed for automotive.

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Full PDF Text Transcription

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STH52N10LF3-2AG Automotive-grade N-channel 100 V, 15 mΩ typ., 52 A STripFET™ F3 Power MOSFET in H²PAK-2 package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STH52N10LF3-2AG VDS 100 V RDS(on) max. 20 mΩ ID 52 A  Designed for automotive applications and AEC-Q101 qualified  Conduction losses reduced  Low profile, very low parasitic inductance, high current package Applications  Switching applications Description This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.
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