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STI12NM50N - N-channel Power MOSFET

General Description

ucThis series of devices is realized with the second dgeneration of MDmesh™ technology.

gate charge.

Key Features

  • Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P.
  • 100% avalanche tested te.
  • Low input capacitance and gate charge le.
  • Low gate input resistance bso.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50N t(s)STD12NM50N cSTI12NM50N uSTF12NM50N rodSTP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P■ 100% avalanche tested te■ Low input capacitance and gate charge le■ Low gate input resistance bsoApplication - O■ Switching applications t(s)Description ucThis series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the company’s strip layout to teyield one of the world’s lowest on-resistance and gate charge.