STI12NM50N Datasheet | STMicroelectronics

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features Type VDSS (@Tjmax) RDS(on) max STB12NM50N t(s)STD12NM50N c STI12NM50N u STF12NM50N rod STP12NM50N 550 V 550 V 550 V 550 V 550 V 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 0.38 Ω 11 A 11 A 11 A 11 A (1) 11 A P- 100% avalanche tested te- Low input capacitance and gate charge le- Low gate input resistance bso Application - O- Switching applications t(s)Description uc This series of devices is realized with the second dgeneration of MDmesh™ technology. This rorevolutionary Power MOSFET associates a new Pvertical structure to the pany’s strip layout to teyield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most Obsoledemanding high efficiency converters. 3 2 1 TO-220 3 1 DPAK 3 1 D²PAK I²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table...