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STI13005-1 - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Figure 1.

Key Features

  • STI13005-1 is opposite pin out versus standard IPAK package.
  • High voltage capability.
  • Low spread of dynamic parameters.
  • Very high switching speed.

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STI13005-1 High voltage fast-switching NPN power transistor Preliminary data Features ■ STI13005-1 is opposite pin out versus standard IPAK package ■ High voltage capability ■ Low spread of dynamic parameters ■ Very high switching speed Application ■ Switch mode power supplies (AC-DC converters) IPAK 3 2 1 Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram Table 1.