STL160N10F8 Datasheet | STMicroelectronics

N‑channel 100 V, 3.2 mΩ max., 158 A STrip FET F8 Power MOSFET in a Power FLAT 5x6 package Features Order code STL160N10F8 VDS 100 V RDS(on) max. 3.2 mΩ ID 158 A Power FLAT 5x6 - MSL1 grade - 175 °C maximum operating junction temperature - 100% avalanche tested - Low gate charge Qg D(5, 6, 7, 8) Applications 8 76 5 - Server and Tele power - Industrial battery management system (BMS) G(4) - Power tools - Drones S(1, 2, 3) 12 34 Top View GADG09062022 Description The STL160N10F8 is a 100 V N-channel enhancement mode Power MOSFET designed in STrip FET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. Product status link STL160N10F8 Product summary Order code Marking(1) 160N10F8...