STL165N10F8AG Description
The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET designed in STripFET F8 technology featuring an enhanced trench gate structure. It ensures a state-of-the-art of figure of merit for very low on-state resistance while reducing internal capacitances and gate charge for faster and more efficient switching. For engineering samples marking, see Section 3.3:.
STL165N10F8AG Key Features
- AEC-Q101 qualified
- MSL1 grade
- 175 °C maximum operating junction temperature
- 100% avalanche tested
- Low gate charge Qg
- Wettable flank package