STL160N3LLH6 Datasheet | STMicroelectronics

N-channel 30 V, 0.0011 Ω, 35 A Power FLAT™ 5x6 STrip FET™ VI Deep GATE™ Power MOSFET Features Order code STL160N3LLH6 VDSS 30 V RDS(on) max 0.0013 Ω ID 35 A (1) 1. The value is rated according Rthj-pcb - RDS(on) - Qg industry benchmark - Extremely low on-resistance RDS(on) - Very low switching gate charge - High avalanche ruggedness - Low gate drive power losses Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STrip FET™ Deep GATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 1 2 3 Power FLAT™ 5x6 Figure 1. Internal schematic diagram $$$$ '333 "OTTOM6IEW 4OP6IEW !-6 Table 1. Device summary Order...