Datasheet4U Logo Datasheet4U.com

STL160N3LLH6 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Features

  • Order code STL160N3LLH6 VDSS 30 V RDS(on) max 0.0013 Ω ID 35 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses.

📥 Download Datasheet

Datasheet preview – STL160N3LLH6

Datasheet Details

Part number STL160N3LLH6
Manufacturer STMicroelectronics
File Size 1.12 MB
Description N-channel Power MOSFET
Datasheet download datasheet STL160N3LLH6 Datasheet
Additional preview pages of the STL160N3LLH6 datasheet.

📁 Similar Datasheet

  • STL100N3LLH6 - N-Channel Power MOSFET (ST Microelectronics)
  • STL100N3LLH7 - Power MOSFETs N-channel 30V (ST Microelectronics)
  • STL100NH3LL - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STL120NH02V - N-CHANNEL MOSFET (ST Microelectronics)
  • STL12S03F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL12S05F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL12S09F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL12S12F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL12S15F - (STL03S03F - STL15S15F) 2W Single Output Surface Mount DC-DC Converter (Superworld Electronics)
  • STL140N4LLF5 - Power MOSFET (ST Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STL160N3LLH6 N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power MOSFET Features Order code STL160N3LLH6 VDSS 30 V RDS(on) max 0.0013 Ω ID 35 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge ■ High avalanche ruggedness ■ Low gate drive power losses Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 1 2 3 4 PowerFLAT™ 5x6 Figure 1. Internal schematic diagram    $$$$ '333   "OTTOM6IEW   4OP6IEW !-6 Table 1.
Published: |