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STL160N3LLH6 - N-channel Power MOSFET

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General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Overview

STL160N3LLH6 N-channel 30 V, 0.0011 Ω, 35 A PowerFLAT™ 5x6 STripFET™ VI DeepGATE™ Power.

Key Features

  • Order code STL160N3LLH6 VDSS 30 V RDS(on) max 0.0013 Ω ID 35 A (1) 1. The value is rated according Rthj-pcb.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • Very low switching gate charge.
  • High avalanche ruggedness.
  • Low gate drive power losses.

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