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STL160N4F7 - N-channel Power MOSFET

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General Description

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Overview

STL160N4F7 Datasheet N-channel 40 V, 2.1 mΩ typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6.

Key Features

  • Order code V DS RDS(on) max STL160N4F7 40 V 2.5 mΩ.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness ID 120 A D(5, 6, 7, 8) 8 76 5.

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