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STL23NM50N - N-channel Power MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STL23NM50N VDSS @ TJmax 550 V RDS(on) max < 0.210 Ω ID 14 A (1) 1. The value is rated according to Rthj-case.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL23NM50N N-channel 500 V, 0.170 Ω typ., 14 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package Datasheet — production data Features Type STL23NM50N VDSS @ TJmax 550 V RDS(on) max < 0.210 Ω ID 14 A (1) 1. The value is rated according to Rthj-case ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.