STL23NM50N Datasheet | STMicroelectronics

N-channel 500 V, 0.170 Ω typ., 14 A MDmesh™ II Power MOSFET in a PowerFLAT™ 8x8 HV package - production data Features Type STL23NM50N VDSS @ TJmax 550 V RDS(on) max < 0.210 Ω ID 14 A (1) 1. The value is rated according to Rthj-case - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Applications - Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the...