STL23NS3LLH7 Description
This N-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure bined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. S(1, 2, 3) Order code STL23NS3LLH7 Table.
STL23NS3LLH7 Key Features
- Very low on-resistance
- Very low Qg
- High avalanche ruggedness
- Embedded Schottky diode