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STL23NS3LLH7 - N-channel Power MOSFET

General Description

This N-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance.

The device also offers ultra-low capacitances for higher switching frequency operations.

Key Features

  • Order code STL23NS3LLH7 VDS 30 V RDS(on) max 0.0037 Ω ID 23 A.
  • Very low on-resistance.
  • Very low Qg.
  • High avalanche ruggedness.
  • Embedded Schottky diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL23NS3LLH7 N-channel 30 V, 0.0027 Ω typ., 23 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3 Datasheet - production data Figure 1: Internal schematic diagram D(5, 6, 7, 8) G(4) Features Order code STL23NS3LLH7 VDS 30 V RDS(on) max 0.0037 Ω ID 23 A  Very low on-resistance  Very low Qg  High avalanche ruggedness  Embedded Schottky diode Applications  Switching applications Description This N-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. S(1, 2, 3) Order code STL23NS3LLH7 Table 1: Device summary Marking Package 23NS3 PowerFLATTM 3.3 x 3.