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STL85N6F3 - Power MOSFET

General Description

This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility.

Key Features

  • Type STL85N6F3 VDSS 60 V RDS(on) max < 0.0057 Ω ID 19 A (1) 1. The value is rated according Rthj-pcb.
  • Extremely low on-resistance RDS(on) 100% avalanche tested PowerFLAT™ (6x5).

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www.DataSheet4U.com STL85N6F3 N-channel 60 V, 0.005 Ω, 19 A PowerFLAT™ (6x5) STripFET™ Power MOSFET Preliminary Data Features Type STL85N6F3 VDSS 60 V RDS(on) max < 0.0057 Ω ID 19 A (1) 1. The value is rated according Rthj-pcb ■ ■ Extremely low on-resistance RDS(on) 100% avalanche tested PowerFLAT™ (6x5) Application ■ Switching applications Description This N-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Table 1.