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STL86N3LLH6AG - N-channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Key Features

  • Order code VDS RDS(on) max. ID STL86N3LLH6AG 30 V 4 3 2 1 PowerFLAT™ 5x6 D(5, 6, 7, 8) 8 76 5.
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Logic level.
  • Wettable flank package G(4).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL86N3LLH6AG Datasheet Automotive-grade N-channel 30 V, 4 mΩ typ., 80 A STripFET™ H6 Power MOSFET in a PowerFLAT™ 5x6 package Features Order code VDS RDS(on) max. ID STL86N3LLH6AG 30 V 4 3 2 1 PowerFLAT™ 5x6 D(5, 6, 7, 8) 8 76 5 • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level • Wettable flank package G(4) Applications 5.2 mΩ 80 A 12 34 • Switching applications S(1, 2, 3) Top View AM15540v2 Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.