STL8DN6LF3 Description
This device is an N-channel Power MOSFET developed using STripFET F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance. STL8DN6LF3 Electrical ratings 1 Electrical ratings Table.
STL8DN6LF3 Key Features
- AEC-Q101 qualified
- Logic level VGS(th)
- 175 °C maximum junction temperature
- 100% avalanche rated
- Wettable flank package