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STL8DN6LF6AG - Automotive-grade dual N-channel MOSFET

General Description

SC12820 technology with a new trench gate structure.

very low RDS(on) in all packages.

Key Features

  • Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6).
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Wettable flank package PTOT 55 W G1(2) G2(4).

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STL8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 mΩ typ., 32 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 DI package Features Order code STL8DN6LF6AG VDS 60 V RDS(on) max. 27 mΩ ID 32 A 4 3 2 1 PowerFLAT 5x6 double island D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Wettable flank package PTOT 55 W G1(2) G2(4) Applications • Switching applications Description S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.