STL8DN6LF6AG Description
S1(1) S2(3) This device is a dual N-channel Power MOSFET developed using the STripFET F6 SC12820 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. STL8DN6LF6AG Electrical ratings 1 Electrical ratings Table.
STL8DN6LF6AG Key Features
- AEC-Q101 qualified
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
- Wettable flank package