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STN1NK80Z - N-channel Power MOSFET

General Description

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH.

Key Features

  • Order codes VDS STN1NK80Z STQ1NK80ZR-AP 800 V.
  • 100% avalanche tested.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Zener-protected RDS(on) max. 16 Ω ID 250 mA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN1NK80Z, STQ1NK80ZR-AP Datasheet N-channel 800 V, 13 Ω typ., 250 mA SuperMESH Power MOSFETs in a SOT-223 and TO-92 packages 4 1 23 SOT-223 3 2 1 TO-92 (Ammopack) D(2, 4) D(2) G(1) G(1) S(3) SOT-23 S(3) TO-92 Features Order codes VDS STN1NK80Z STQ1NK80ZR-AP 800 V • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected RDS(on) max. 16 Ω ID 250 mA Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH.